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基于GaN的輸入諧波控制射頻功率放大器設(shè)計(jì)
2021年電子技術(shù)應(yīng)用第4期
邵煜偉,陶洪琪
南京電子器件研究所 微波毫米波單片集成和模塊電路重點(diǎn)實(shí)驗(yàn)室,江蘇 南京210016
摘要: 定量地分析了輸入諧波控制理論對(duì)功放效率的影響。同時(shí),選用了南京電子器件研究所的0.25 ?滋m GaN HEMT器件,并對(duì)該GaN HEMT器件進(jìn)行了負(fù)載牽引仿真和大信號(hào)仿真。根據(jù)仿真結(jié)果發(fā)現(xiàn),通過(guò)輸入諧波控制可以提升射頻功率放大器的效率,在頻帶內(nèi)能獲得3~10%的效率提升。以此設(shè)計(jì)了一款X波段單級(jí)MMIC功放。經(jīng)測(cè)試,該功放芯片在9.2~11.3 GHz范圍內(nèi)功率附加效率最大可以達(dá)到 52.88%。
中圖分類(lèi)號(hào): TN722
文獻(xiàn)標(biāo)識(shí)碼: A
DOI:10.16157/j.issn.0258-7998.201247
中文引用格式: 邵煜偉,陶洪琪. 基于GaN的輸入諧波控制射頻功率放大器設(shè)計(jì)[J].電子技術(shù)應(yīng)用,2021,47(4):67-70,76.
英文引用格式: Shao Yuwei,Tao Hongqi. Design of GaN-based input harmonic control RF power amplifier[J]. Application of Electronic Technique,2021,47(4):67-70,76.
Design of GaN-based input harmonic control RF power amplifier
Shao Yuwei,Tao Hongqi
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016,China
Abstract: The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test and harmonic balance simulation of the GaN HEMT device were carried out. According to the test results, it is found that the efficiency of the RF power amplifier can be effectively improved through the input harmonic control, and an efficiency improvement at 3~10%can be obtained in band. Based on this, an X-band single-stage monolithic microwave integrated circuit(MMIC) power amplifier was designed. After testing, the power amplifier chip has a maximum PAE at 52.88% in the range of 9.2 to 11.3 GHz.
Key words : power amplifier;input harmonic control;high efficiency;monolithic microwave integrated circuit

0 引言

    隨著電子通信技術(shù)的不斷發(fā)展,諧波控制射頻功率放大器由于其高效率的特性廣泛應(yīng)用于航天雷達(dá)等領(lǐng)域中。諧波控制是目前提高功放效率的重要技術(shù)之一。




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作者信息:

邵煜偉,陶洪琪

(南京電子器件研究所 微波毫米波單片集成和模塊電路重點(diǎn)實(shí)驗(yàn)室,江蘇 南京210016)

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