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一種帶短路保護(hù)的磁隔離IGBT驅(qū)動(dòng)架構(gòu)
電子技術(shù)應(yīng)用
劉甲俊,李飛,陳榮昕,鄧玉清,肖培磊
中國(guó)電子科技集團(tuán)公司第五十八研究所
摘要: 設(shè)計(jì)一種帶短路保護(hù)的磁隔離IGBT驅(qū)動(dòng)架構(gòu),該架構(gòu)采用變壓器隔離,集成去飽和檢測(cè)電路、米勒鉗位電路和軟關(guān)斷,當(dāng)IGBT發(fā)生短路故障退出飽和區(qū),便對(duì)器件執(zhí)行軟關(guān)斷,并通過(guò)米勒鉗位電路抑制柵極電壓尖峰。同時(shí)通過(guò)故障反饋通道將故障信號(hào)反饋給前級(jí)控制器,實(shí)現(xiàn)對(duì)短路故障的快速響應(yīng)。仿真和實(shí)測(cè)結(jié)果表明,本架構(gòu)具有8 kV的隔離耐壓,去飽和檢測(cè)和米勒鉗位閾值分別為9 V和2 V,去飽和故障響應(yīng)時(shí)間為419 ns,故障報(bào)錯(cuò)時(shí)間為311 ns,軟關(guān)斷時(shí)間為136 ns。該架構(gòu)實(shí)現(xiàn)了短路故障保護(hù)和故障反饋,已應(yīng)用在某一高耐壓隔離IGBT驅(qū)動(dòng)器中。
中圖分類號(hào):TN433 文獻(xiàn)標(biāo)志碼:A DOI: 10.16157/j.issn.0258-7998.245808
中文引用格式: 劉甲俊,李飛,陳榮昕,等. 一種帶短路保護(hù)的磁隔離IGBT驅(qū)動(dòng)架構(gòu)[J]. 電子技術(shù)應(yīng)用,2025,51(3):44-48.
英文引用格式: Liu Jiajun,Li Fei,Chen Rongxin,et al. A magnetic isolation IGBT driver architecture with short circuit protection[J]. Application of Electronic Technique,2025,51(3):44-48.
A magnetic isolation IGBT driver architecture with short circuit protection
Liu Jiajun,Li Fei,Chen Rongxin,Deng Yuqing,Xiao Peilei
The 58th Research Institute of China Electronics Technology Group
Abstract: A magnetic isolation IGBT drive architecture with short circuit protection is designed in this paper. The architecture adopts transformer isolation, integrates desaturation detection circuit, Miller clamp circuit and soft turn-off. When IGBT exits the saturation zone due to short circuit fault, soft turn-off is performed on the device. The gate voltage spike is suppressed by Miller clamp circuit. At the same time, the fault signal is fed back to the front controller through the fault feedback channel to realize the fast response to the short-circuit fault. The simulation and measured results show that the architecture has an isolated voltage withstand of 8 kV, desaturation detection and Miller clamp threshold of 9 V and 2 V respectively, desaturation fault response time of 419 ns, fault error time of 311 ns, soft shutdown time of 136 ns. The architecture realizes short-circuit fault protection and fault feedback, and has been applied to a high voltage isolated IGBT driver.
Key words : short circuit protection;magnetic isolation;isolated IGBT driver architecture

引言

絕緣柵雙極性晶體管(Insulated Gate Bipolar Transistor,IGBT)因?yàn)榫哂休斎胱杩垢摺㈤_關(guān)損耗小和飽和壓降低等特點(diǎn)被廣泛應(yīng)用[1-3]。但是IGBT柵極寄生電容大,導(dǎo)通電壓高[4-5],傳統(tǒng)微控制器無(wú)法直接驅(qū)動(dòng)IGBT。并且IGBT主要工作在高壓和大電流的環(huán)境中,常發(fā)生短路故障使其退出飽和區(qū),造成器件過(guò)流而發(fā)生損壞。另外IGBT驅(qū)動(dòng)器應(yīng)用在IGBT和控制器之間,為防止高壓側(cè)發(fā)生故障對(duì)人體和設(shè)備造成傷害,驅(qū)動(dòng)器需要有較高的隔離耐壓。因此為了提高系統(tǒng)的穩(wěn)定性和安全性,需要一種帶短路保護(hù)和高隔離耐壓的驅(qū)動(dòng)架構(gòu),有足夠高的導(dǎo)通電壓驅(qū)動(dòng)IGBT,當(dāng)IGBT發(fā)生短路故障退出飽和區(qū)時(shí),能夠迅速地關(guān)斷IGBT,并且能夠抑制關(guān)斷期間產(chǎn)生的柵極電壓和集電極電壓尖峰,同時(shí)要將短路故障信號(hào)從高壓側(cè)傳回到低壓側(cè)完成短路故障監(jiān)測(cè)。

文獻(xiàn)[6-7]提出了一種帶短路保護(hù)電路的IGBT驅(qū)動(dòng)架構(gòu),利用一個(gè)低阻值電阻串聯(lián)在IGBT的發(fā)射極實(shí)現(xiàn)短路檢測(cè),該架構(gòu)不能抑制關(guān)斷期間產(chǎn)生的柵極和集電極電壓尖峰,并且無(wú)隔離功能。文獻(xiàn)[8-9]提出一種帶短路保護(hù)的光耦隔離IGBT驅(qū)動(dòng)架構(gòu),該驅(qū)動(dòng)架構(gòu)采用光耦隔離,完成對(duì)IGBT去飽和檢測(cè)的同時(shí)又能抑制尖峰電壓,但是該架構(gòu)集成的軟關(guān)斷時(shí)間較長(zhǎng),并且光耦隨時(shí)間會(huì)發(fā)生老化,可靠性較差。文獻(xiàn)[10]提出一種帶短路保護(hù)的電容隔離IGBT驅(qū)動(dòng)架構(gòu),具有去飽和檢測(cè)電路,并且采用電容隔離解決了光耦隔離發(fā)生老化的問(wèn)題,但是該架構(gòu)沒(méi)有柵極和集電極電壓尖峰保護(hù)電路,IGBT在關(guān)斷期間存在擊穿風(fēng)險(xiǎn),并且電容隔離傳輸速度慢,對(duì)噪聲的抑制能力較差。

針對(duì)上述問(wèn)題,本文設(shè)計(jì)一種帶短路保護(hù)的雙通道磁隔離IGBT驅(qū)動(dòng)架構(gòu),該架構(gòu)在典型條件下具有15 V的驅(qū)動(dòng)電壓,并且具有去飽和檢測(cè)電路、米勒鉗位電路和軟關(guān)斷功能。并且設(shè)計(jì)兩個(gè)數(shù)字隔離信號(hào)通道,分別傳輸控制信號(hào)和去飽和故障信號(hào),當(dāng)檢測(cè)到IGBT發(fā)生短路故障后可以迅速關(guān)斷IGBT,并將故障信號(hào)通過(guò)故障反饋通道傳回到前級(jí)控制器,以便對(duì)故障做出響應(yīng)。另外通過(guò)米勒鉗位電路和軟關(guān)斷抑制關(guān)斷期間產(chǎn)生的柵極和集電極電壓尖峰,確保IGBT安全關(guān)斷,并采用無(wú)磁芯變壓器技術(shù)將高壓側(cè)和低壓控制側(cè)進(jìn)行電氣隔離,克服了光耦發(fā)生老化和電容傳輸速率低和對(duì)噪聲抑制能力差的缺點(diǎn)。


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作者信息:

劉甲俊,李飛,陳榮昕,鄧玉清,肖培磊

(中國(guó)電子科技集團(tuán)公司第五十八研究所,江蘇 無(wú)錫 204135)


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