中圖分類號： TN386
文獻(xiàn)標(biāo)識碼： A
DOI：10.16157/j.issn.0258-7998.200552
中文引用格式： 沈華，甄昊涵，童濤，等. MOSFET寄生參數(shù)對LLC諧振變換器性能影響研究[J].電子技術(shù)應(yīng)用，2021，47(1)：41-45.

Influence of MOSFET parasitic parameters on LLC resonant converter performance

Abstract： For the influence of the parasitic parameters of MOSFET on the performance of LLC resonant circuit, the equivalent analysis of the parasitic capacitance of MOSFET is first carried out. Based on this equivalent model, in the LLC resonant conversion circuit, due to the existence of parasitic parameters, the impact of each stage of the circuit is analyzed. Then, the nonlinear characteristics caused by parasitic parameters are modeled based on the Angelov model, and the impact of the model on the DC circuit is analyzed. Finally, the LLC resonant circuit model is established under MATLAB, and the influence of parasitic parameters is considered in the simulation model. The simulation results show that the equivalent model established in this article can better reflect the operating characteristics of the MOSFET device; at the same time, due to the presence of parasitic parameters, the output gain and resonance frequency of the LLC resonant circuit will be affected, especially the resonance frequency Greater impact.

Key words : parasitic parameters；LLC resonant circuit；Angelov model；output gain；resonant frequency