飛思卡爾半導(dǎo)體為 GSM EDGE 無線網(wǎng)絡(luò)擴(kuò)大 RF 功率晶體管產(chǎn)品陣容
2009-06-12
作者:飛思卡爾
2009年6月8日,波士頓訊(2009年國(guó)際微波研討會(huì))- 隨著基于 LDMOS(laterally-diffused metal oxide semiconductor,橫向擴(kuò)散金屬氧化物半導(dǎo)體)技術(shù)的三個(gè)高性能 RF 功率晶體管的推出,飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" title="飛思卡爾半導(dǎo)體">飛思卡爾半導(dǎo)體" 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飛思卡爾副總裁兼 RF 部門總經(jīng)理 Gavin Woods 表示:“隨著行業(yè)向第三和第四代無線業(yè)務(wù)不斷邁進(jìn),GSM 無疑是部署最為廣泛的無線技術(shù)。飛思卡爾最新的 RF 功率晶體管的設(shè)計(jì)旨在通過提高基站收發(fā)器的效率,幫助全球的 GSM 運(yùn)營(yíng)商提高來自每個(gè)用戶的平均收入?!?
MRFE6S9046N (920 至 960 MHz)
對(duì)于 GSM EDGE 的應(yīng)用,MRFE6S9046N 的運(yùn)行頻率為 920 至 960 MHz,提供17.8 W 的平均 RF 功率輸出,19 dB 的增益,效率高達(dá) 42.5%,且誤差矢量幅度的均方根(RMS)值不超過2.1%。它內(nèi)置在飛思卡爾超模壓塑膠封裝中,該封裝是精確機(jī)械公差和成本效率的結(jié)合。此外,該封裝是表面安裝的,這使它能夠支持自動(dòng)化的制造流程。而且,增強(qiáng)型的內(nèi)部阻抗匹配能使制造商更輕松地適應(yīng)印刷電路板的變化。內(nèi)部輸出匹配不僅在基本頻率上實(shí)現(xiàn)了用戶友好的終端阻抗,而且還包括賴以實(shí)現(xiàn)更高效率的第二和第三個(gè)諧波終端,以符合 F 級(jí)放大器的理論。?
MRF8S9100H/HS(920 至 960 MHz) 與 MRF8S18120H/HS(1805 至 1880 MHz)
這些 28 V 的器件專為 GSM 與 EDGE 系統(tǒng)中的 AB 級(jí)與 C 級(jí)的操作而設(shè)計(jì)。在 GSM EDGE 業(yè)務(wù)中,MRF8S9100H/HS 在 940 MHz 運(yùn)行時(shí)提供 45 W的平均功率,19.1 dB 的增益,44%的效率以及均方根(RMS)值為2.0%的誤差矢量幅度(EVM)。?
在 GSM EDGE 業(yè)務(wù)中,MRF8S18120H/HS 在 1840 MHz 運(yùn)行時(shí)提供 46 W的平均功率,18.2 dB 的增益,42%的效率以及均方根(EVM)值為1.7%的誤差矢量幅度。MRF8S9100H/HS 與 MRF8S18120H/HS 內(nèi)置在結(jié)實(shí)的氣腔陶瓷封裝中。MRF8S9100H/HS 還能夠在 GSM 800 頻段中操作,而 MRF8S18120H/HS 支持在 GSM 1900 頻段中的操作。所有這三個(gè)器件都是內(nèi)部匹配的,以簡(jiǎn)化電路設(shè)計(jì),符合 RoHS規(guī)范,并且還包含內(nèi)部 ESD 保護(hù)電路。?
定價(jià)和供貨情況
MRFE6S9046N 現(xiàn)已成批生產(chǎn),而且也可提供樣品。MRF8S9100H/HS 與 MRF8S18120H/HS 現(xiàn)在也處于樣品性能試驗(yàn)階段,預(yù)計(jì)2009年7月全面投入生產(chǎn)。參考測(cè)試設(shè)備將與預(yù)期于2009年7月生產(chǎn)的大型信號(hào)模型一起提供。如需樣品和定價(jià)信息,請(qǐng)與飛思卡爾半導(dǎo)體本地銷售辦事處或授權(quán)經(jīng)銷商聯(lián)系。 ?
請(qǐng)參觀6月7-12日波士頓 IMS MTT-S (www.ims2009.org) 展會(huì)中2018號(hào)的飛思卡爾展位。如需最新的展示更新信息,請(qǐng)關(guān)注 RFLeonard在Twitter 上的微博客 : www.twitter.com/RFLeonard?
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