中圖分類號(hào)：TN16 文獻(xiàn)標(biāo)志碼：A DOI: 10.16157/j.issn.0258-7998.257241
中文引用格式： 黃宇，王威威，康磊，等. 掃描電鏡中掃描電路性能及對(duì)圖像影響分析[J]. 電子技術(shù)應(yīng)用，2026，52(4)：73-77.
英文引用格式： Huang Yu，Wang Weiwei，Kang Lei，et al. Analysis of the impact of scanning circuit performance on images in SEM[J]. Application of Electronic Technique，2026，52(4)：73-77.

Analysis of the impact of scanning circuit performance on images in SEM

Abstract： The image quality of the Scanning Electron Microscope (SEM) is highly dependent on the accuracy and stability of the output signals from its scanning circuitry. However, the impact of scanning signals on image quality remains insufficiently explored in existing research. To address this, a transmission mechanism from scanning signals to image quality was established, and the influence of scanning signal performance metrics on the image was analyzed. Using high-precision digital multimeters and oscilloscopes, actual scanning signals were accurately measured. Data processed via the endpoint fitting method enabled quantification of error levels in both field and line scanning signals under a 512×512 pixel mode. Furthermore, MATLAB was employed to simulate the impact of various errors on a standard grid image, and measured signal data were imported to evaluate their effect in practical imaging. The results indicate that the scanning signals exhibit good overall linear performance, with an average error of 1.884 pixels in the central region, superior to the 2.749 pixels observed in the peripheral region.

Key words : scanning electron microscope（SEM）；scanning circuitry；linearity error；differential nonlinearity（DNL）；integral nonlinearity （INL）；image quality evaluation