中圖分類號：TN432 文獻標志碼：A DOI: 10.16157/j.issn.0258-7998.256777
中文引用格式： 顧江川，鄒冰清. 基于SiC IPD技術(shù)的小型化大功率Gysel功分器設計[J]. 電子技術(shù)應用，2025，51(9)：39-43.
英文引用格式： Gu Jiangchuan，Zou Bingqing. Design of a miniaturized high-power Gysel power divider based on SiC IPD technology[J]. Application of Electronic Technique，2025，51(9)：39-43.

Design of a miniaturized high-power Gysel power divider based on SiC IPD technology

Abstract： As a crucial passive device in the RF front-end, the power divider continues to evolve towards miniaturization and higher power capabilities. A novel Gysel power divider based on SiC IPD technology is proposed. The distributed circuit is converted into a lumped topology using π-shaped and Bridged T-coil equivalent circuits, significantly achieving miniaturization of the device. Theoretical derivation of the lumped equivalent circuit is provided using the odd-even mode method. The circuit topology is modeled and analyzed based on HFSS full-wave simulation. The lumped inductors and capacitors are fabricated using semiconductor processes, featuring high fabrication precision and accurate values, which ensures stable device performance. The SiC substrate exhibits excellent heat dissipation capability, effectively enhancing power capacity. The measured results demonstrate that the return loss is greater than 10 dB, insertion loss is less than 0.9 dB in 6.3~7.7 GHz operating frequency. The isolation is more than 15 dB across 5~9 GHz, and the ultra-compact electrical dimensions is 0.10×0.05 (λg×λg@f0). These results validate its high engineering application value.

Key words : Gysel power divider；π-shaped equivalent circuit；bridged T-coil equivalent circuit；miniaturization；high-power