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基于SiC IPD技術(shù)的小型化大功率Gysel功分器設(shè)計(jì)
電子技術(shù)應(yīng)用
顧江川1,2,鄒冰清1,2
1.南京國(guó)博電子股份有限公司;2.南京市高密度射頻微系統(tǒng)集成工程技術(shù)研究中心
摘要: 功分器作為射頻前端重要的無(wú)源器件,不斷朝著小型化、大功率方向發(fā)展。為此,提出一種基于SiC IPD技術(shù)的新型Gysel功分器,采用π形和Bridged T-coil等效電路將分布式電路轉(zhuǎn)換成集總式拓?fù)洌瑢?shí)現(xiàn)功分器的小型化設(shè)計(jì)。通過(guò)奇偶模分析方法給出集總等效電路的理論推導(dǎo),并進(jìn)行HFSS全波仿真。集總電感和電容采用半導(dǎo)體工藝制造,加工精度高,感值容值精準(zhǔn),器件性能穩(wěn)定。此外,基板采用具有良好的散熱能力的SiC材料,有利于提升器件的功率容量。測(cè)試結(jié)果表明,功分器在6.3~7.7 GHz范圍內(nèi)回波損耗大于10 dB,插損小于0.9 dB,端口隔離度在5~9 GHz范圍內(nèi)大于15 dB,電波長(zhǎng)尺寸為0.10×0.05(λg×λg@f0),具有較高的工程應(yīng)用價(jià)值。
中圖分類號(hào):TN432 文獻(xiàn)標(biāo)志碼:A DOI: 10.16157/j.issn.0258-7998.256777
中文引用格式: 顧江川,鄒冰清. 基于SiC IPD技術(shù)的小型化大功率Gysel功分器設(shè)計(jì)[J]. 電子技術(shù)應(yīng)用,2025,51(9):39-43.
英文引用格式: Gu Jiangchuan,Zou Bingqing. Design of a miniaturized high-power Gysel power divider based on SiC IPD technology[J]. Application of Electronic Technique,2025,51(9):39-43.
Design of a miniaturized high-power Gysel power divider based on SiC IPD technology
Gu Jiangchuan1,2,Zou Bingqing1,2
1.Nanjing Guobo Electronics Co., Ltd.;2.Nanjing High Density RF Microsystem Integration Engineering Technology Research Center
Abstract: As a crucial passive device in the RF front-end, the power divider continues to evolve towards miniaturization and higher power capabilities. A novel Gysel power divider based on SiC IPD technology is proposed. The distributed circuit is converted into a lumped topology using π-shaped and Bridged T-coil equivalent circuits, significantly achieving miniaturization of the device. Theoretical derivation of the lumped equivalent circuit is provided using the odd-even mode method. The circuit topology is modeled and analyzed based on HFSS full-wave simulation. The lumped inductors and capacitors are fabricated using semiconductor processes, featuring high fabrication precision and accurate values, which ensures stable device performance. The SiC substrate exhibits excellent heat dissipation capability, effectively enhancing power capacity. The measured results demonstrate that the return loss is greater than 10 dB, insertion loss is less than 0.9 dB in 6.3~7.7 GHz operating frequency. The isolation is more than 15 dB across 5~9 GHz, and the ultra-compact electrical dimensions is 0.10×0.05 (λg×λg@f0). These results validate its high engineering application value.
Key words : Gysel power divider;π-shaped equivalent circuit;bridged T-coil equivalent circuit;miniaturization;high-power

引言

雷達(dá)射頻前端近年來(lái)不斷朝著大功率小型化、高密度集成等方向發(fā)展[1-3],功分器作為射頻前端常用的無(wú)源器件,對(duì)其大功率小型化的要求也越來(lái)越高。威爾金森功分器是最常見(jiàn)的功分形式,具有結(jié)構(gòu)簡(jiǎn)單、隔離度高、易于設(shè)計(jì)等優(yōu)點(diǎn)[4]。但其在大功率應(yīng)用場(chǎng)合,存在諸多不足。而改進(jìn)型的Gysel功分器相比傳統(tǒng)的威爾金森功分器具有更高的功率容量,在現(xiàn)代射頻前端系統(tǒng)的大功率應(yīng)用場(chǎng)景中占據(jù)重要地位。

Gysel功分器具有更高的功率容量,Gysel功分器拓?fù)涫菍⑼柦鹕負(fù)渲械?00 Ω跨接隔離電阻變換成兩個(gè)50 Ω的對(duì)地隔離電阻,能夠有效地將一路耗散功率分成兩路,從而快速地將熱量傳遞到地或者殼體上,實(shí)現(xiàn)功率容量提升。而兩個(gè)對(duì)地隔離電阻也就意味著Gysel拓?fù)湟韧柦鹕負(fù)涠嘁粋€(gè)隔離網(wǎng)絡(luò),這個(gè)隔離度網(wǎng)絡(luò)由兩段λg/4和一段λg/2波長(zhǎng)線構(gòu)成,這就導(dǎo)致Gysel功分器通常尺寸較大,實(shí)際工程應(yīng)用中存在諸多限制,無(wú)法適應(yīng)小型化的應(yīng)用場(chǎng)合。而當(dāng)前一些學(xué)者對(duì)Gysel功分器的關(guān)注點(diǎn)在任意功率分配比的實(shí)現(xiàn)[5]、不等分功率比可調(diào)[6]、多頻段工作的靈活配置[7-8]等層面。對(duì)于縮小Gysel功分器的尺寸的方案,主流的方案仍然是加載stub枝節(jié)或者微帶線蛇形布局[9]。這些方案本質(zhì)上電路拓?fù)淙匀皇欠植际降?,?duì)尺寸的縮減效果甚微,并不能從本質(zhì)上實(shí)現(xiàn)Gysel功分器的小型化。

針對(duì)Gysel功分器的小型化難題,本文提出一種基于IPD技術(shù)的新型小型化大功率Gysel功分器。采用π形和Bridged T-coil等效電路將分布式電路轉(zhuǎn)換成集總式拓?fù)?,從而極大地縮減尺寸,實(shí)現(xiàn)功分器的小型化。集總電感和電容采用半導(dǎo)體工藝設(shè)計(jì)制造,加工精度高,感值容值精準(zhǔn),有利于保證器件性能穩(wěn)定。此外,基板采用SiC材料,熱導(dǎo)率高達(dá)390 W/(m·K),具有良好的散熱能力?;迥苡行鲗?dǎo)電阻上耗散的熱量,有利于提升器件的功率容量。最后,從測(cè)試層面對(duì)所提出的功分器進(jìn)行了分析。


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作者信息:

顧江川1,2,鄒冰清1,2

(1.南京國(guó)博電子股份有限公司,江蘇 南京 211111;

2.南京市高密度射頻微系統(tǒng)集成工程技術(shù)研究中心,江蘇 南京 211111)


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