《電子技術(shù)應(yīng)用》
您所在的位置:首頁(yè) > 測(cè)試測(cè)量 > 設(shè)計(jì)應(yīng)用 > 硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀研發(fā)及應(yīng)用
硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀研發(fā)及應(yīng)用
電子技術(shù)應(yīng)用
徐少一,李偉,劉翔
江蘇核電有限公司,江蘇 連云港222042
摘要: 硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀廣泛應(yīng)用于核設(shè)施的放射性測(cè)量,基于目前正在開展的國(guó)產(chǎn)化研發(fā)項(xiàng)目,對(duì)硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀的總體設(shè)計(jì)研發(fā)、儀表主要硬件設(shè)計(jì)、軟件功能設(shè)計(jì)進(jìn)行了介紹,同時(shí)對(duì)硅半導(dǎo)體和氣體探測(cè)器主要技術(shù)參數(shù)進(jìn)行了對(duì)比,自主研發(fā)的硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀可滿足不同堆型眾多場(chǎng)景劑量率監(jiān)測(cè)的要求,具有良好的應(yīng)用前景。
中圖分類號(hào):TL8 文獻(xiàn)標(biāo)志碼:A DOI: DOI:10.16157/j.issn.0258-7998.234559
中文引用格式: 徐少一,李偉,劉翔. 硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀研發(fā)及應(yīng)用[J]. 電子技術(shù)應(yīng)用,2024,50(3):59-65.
英文引用格式: Xu Shaoyi,Li Wei,Liu Xiang. Development and application of silicon semiconductor γ dose rate monitor[J]. Application of Electronic Technique,2024,50(3):59-65.
Development and application of silicon semiconductor γ dose rate monitor
Xu Shaoyi,Li Wei,Liu Xiang
Instrument & Control Department of Jiangsu Nuclear Power Co., Ltd., Lianyungang 222042, China
Abstract: Silicon semiconductor γ dose rate monitor is widely used in the radioactivity measurement of nuclear facilities. Based on the ongoing localization research and development project, this paper introduces overall design and development of the γ silicon semiconductor dose rate monitor, the main hardware design and software function design of the instrument. At the same time, the main technical parameters of the silicon semiconductor and the gas detector are compared. The self-developed silicon semiconductor γ dose rate monitor can meet the monitoring requirements of different reactor types and has a good application prospect.
Key words : silicon semiconductor;γ dose rate monitor

引言

國(guó)內(nèi)廣泛應(yīng)用γ劑量率儀表采用氣體探測(cè)器,由于氣體探測(cè)器存在體積較大、抗干擾能力較差等不易滿足特殊環(huán)境條件監(jiān)測(cè)要求等不足,其應(yīng)用范圍受到了較大限制。國(guó)內(nèi)部分堆型在主蒸汽管線上和通風(fēng)管道內(nèi)布置了在線γ劑量率監(jiān)測(cè)儀表,要求具備體積小、抗干擾能力強(qiáng)、響應(yīng)時(shí)間快、性能穩(wěn)定等特點(diǎn)[1]。硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀表具有上述特點(diǎn),可以滿足核電站工程應(yīng)用的實(shí)際需求,但目前硅半導(dǎo)體輻射探測(cè)器技術(shù)被國(guó)外儀器公司所壟斷,采購(gòu)成本高、周期長(zhǎng),且無法提供直接的工廠售后服務(wù),在設(shè)備供貨、運(yùn)行維護(hù)過程中受到較大限制。為消除現(xiàn)有氣體探測(cè)器在工程應(yīng)用領(lǐng)域技術(shù)上的短板,實(shí)現(xiàn)硅半導(dǎo)體γ劑量率儀表實(shí)際工程化應(yīng)用,需針對(duì)性研發(fā)一種硅半導(dǎo)體γ劑量率監(jiān)測(cè)儀。


本文詳細(xì)內(nèi)容請(qǐng)下載:

http://ihrv.cn/resource/share/2000005917


作者信息:

徐少一,李偉,劉翔  江蘇核電有限公


雜志訂閱.jpg

此內(nèi)容為AET網(wǎng)站原創(chuàng),未經(jīng)授權(quán)禁止轉(zhuǎn)載。